Mfr Part #:

RSS065N03TB

Mfr Name: NA

The ROHM RSS065N03TB is a silicon N-channel MOS FET designed for power switching and DC/DC converter applications. It features low on-resistance and a built-in G-S protection diode.

✓ Total Stock: 259 pcs

RSS065N03TB Available from 1 distributor

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Distributor		Stock	Pricing	MOQ	PKG	Lead Time	Date Code	On Order Quantity	On Order Delivery
PROSOFT ELECTRONICS ✓ Non-Authorised Inventory information	259 pcs On Request	259 pcs	On Request	1	On Request	On Request	04+	On Request	On Request

RSS065N03TB Specifications Quick View

Most important parameters for selection – full specs in datasheet.

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Category	New Products
Manufacturer Name	NA
Forward Voltage	1.2V
Input Capacitance	430pF
Mounting Type	Surface Mount
Package / Case	SOP-8
SVHC Present	Not Present
Storage Temperature	−55 to +150°C

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RSS065N03TB Description

Short technical summary and product information.

The ROHM RSS065N03TB is a silicon N-channel MOS FET suitable for power switching and DC/DC converter applications. It offers a drain-source breakdown voltage of 30V and a continuous drain current of 6.5A. The device boasts low on-resistance, with typical values of 19mΩ at 6.5A and 10V VGS. It also includes a built-in gate-source protection diode to safeguard against static electricity.

This MOSFET is housed in a compact SOP-8 surface mount package, making it ideal for space-constrained designs. Key electrical characteristics include a gate threshold voltage ranging from 1.0V to 2.5V and various capacitance values such as Ciss at 430pF, Coss at 155pF, and Crss at 80pF. Switching times are also specified, with turn-on and turn-off delays around 8ns, and rise and fall times of 31ns and 6.1ns respectively. The total gate charge is 1.5nC.

The absolute maximum ratings include a drain-source voltage of 30V, gate-source voltage of ±20V, and a continuous drain current of ±6.5A. Total power dissipation is rated at 2W when mounted on a ceramic board. The operating channel temperature can reach up to 150°C, with storage temperatures ranging from -55°C to +150°C. Thermal resistance from channel to ambient is 62.5°C/W when mounted on a ceramic board.

RSS065N03TB Quick Information

Product Type: MOSFET

Canonical Name: ROHM RSS065N03TB N-Channel MOSFET

Subcategory: Single

RSS065N03TB Compliance

RoHS Status: RoHS Compliant

Moisture Sensitivity Level (MSL): 1 Unlimited

REACH Status: REACH Unaffected

RSS065N03TB Features

Low on-resistance for efficient power switching.
Built-in gate-source protection diode.
Compact SOP-8 surface mount package.
30V drain-source breakdown voltage.
6.5A continuous drain current.

RSS065N03TB Applications

Ideal for power switching circuits.
Suitable for DC/DC converters.
Used in power management designs.
Applications requiring small footprint.

RSS065N03TB FAQs

6 frequently asked questions generated from this part’s specifications.

What is the drain-source breakdown voltage of the RSS065N03TB?

The drain-source breakdown voltage is 30V.

What is the continuous drain current for the RSS065N03TB?

The continuous drain current is 6.5A.

What is the typical static drain-source on-resistance at 6.5A and 10V VGS?

The typical static drain-source on-resistance is 19mΩ.

What package type is the RSS065N03TB available in?

The RSS065N03TB is available in a SOP-8 surface mount package.

What is the RoHS status of the RSS065N03TB?

The RoHS status is RoHS3 Compliant.

What is the Moisture Sensitivity Level (MSL) for this part?

The Moisture Sensitivity Level is 1 Unlimited.