| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
259 pcs
|
259 pcs | On Request | 1 | On Request | On Request | 04+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Supplier Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The ROHM Semiconductor RSS065N03TB is a silicon N-channel MOS FET designed for applications such as power switching and DC/DC converters. It features a drain-source voltage (Vdss) of 30V and a continuous drain current (Id) of 6.5A at 25°C ambient temperature.
This MOSFET boasts a low on-resistance, with a maximum Rds On of 26mOhm at 6.5A and 10V Vgs. It has a gate threshold voltage (Vgs(th)) of 2.5V maximum at 1mA and a maximum gate-source voltage of ±20V. The device can dissipate up to 2W of power at 25°C ambient temperature.
The RSS065N03TB is housed in a compact 8-SOP surface-mount package, measuring 6.0mm x 5.0mm. It operates within a channel temperature range of -55°C to +150°C. The device includes a built-in gate-source protection diode for ESD protection.
Key electrical characteristics include an input capacitance (Ciss) of 430pF maximum at 10V Vds and a gate charge (Qg) of 6.1nC maximum at 5V Vgs. The thermal resistance from channel to ambient is 62.5°C/W when mounted on a ceramic board.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
30V
8-SOIC (0.154", 3.90mm Width)
150°C
2.5V maximum at 1mA drain current.
26mOhm maximum at 10V VGS and 6.5A ID.
430pF maximum at 10V VDS.
6.1nC maximum at 5V VGS.