| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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1,221 pcs
|
1221 pcs | On Request | 1 | On Request | On Request | 18+ | On Request | On Request |
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| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
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| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
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| Tape & Reel | |
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| Vgs (Max) |
The ROHM Semiconductor RSS060P05FU6TB is a P-Channel MOSFET belonging to the Metal Oxide Semiconductor Field-Effect Transistor family. It is designed for power switching applications, DC/DC converters, and inverters.
Key electrical specifications include a drain-source breakdown voltage of -45V and a continuous drain current of 6A at 25°C ambient temperature. The static drain-source on-state resistance is rated at a maximum of 36mΩ at 6A and 10V gate-source voltage. The device supports a gate-source voltage range of ±20V and has a typical gate threshold voltage of -1.0V.
This MOSFET has a total power dissipation of 2W (Ta=25°C) and a channel-to-ambient thermal resistance of 62.5°C/W when mounted on a ceramic board. It operates within a channel temperature range of -55°C to +150°C.
The RSS060P05FU6TB is housed in a compact 8-SOIC surface-mount package, measuring 3.90mm in width. It is suitable for applications requiring efficient power management in a small form factor.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
-45V (45V absolute value).
8-SOIC (0.154", 3.90mm Width) with supplier device package 8-SOP.
Channel temperature up to 150°C, storage temperature from -55°C to +150°C.
6A at Ta=25°C.
26mΩ typical at VGS=-10V, ID=-6A; 35mΩ typical at VGS=-4.5V, ID=-6A.
32.2nC typical at VDD=-25V, ID=-3.0A, VGS=-10V.
2700pF typical at VDS=-10V, f=1MHz.