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RSS050P03FU6TB The ROHM Semiconductor RSS050P03FU6TB is a P-Channel MOSFET designed for switching and amplification. It offers a 30V drain-to-source voltage and a continuous drain current of 5A.
Mfr Part #:

RSS050P03FU6TB

Available from 1 distributors
Mfr Name: ROHM Semiconductor
ROHM Semiconductor
The ROHM Semiconductor RSS050P03FU6TB is a P-Channel MOSFET designed for switching and amplification. It offers a 30V drain-to-source voltage and a continuous drain current of 5A.
✓ Total Stock: 2,217 pcs
$ Price Range: $0.99

RSS050P03FU6TB Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Smaxon Electronics ✓
Non-Authorised Inventory information
2,217 pcs
On Request
2217 pcs On Request 1 On Request On Request 10+ On Request On Request
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RSS050P03FU6TB Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
SVHC Present
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id
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RSS050P03FU6TB Description

Short technical summary and product information.

The ROHM Semiconductor RSS050P03FU6TB is an enhancement-mode P-Channel MOSFET fabricated using advanced MOS technology. It is designed for reliable operation and high efficiency in electronic circuits.

 

Key electrical specifications include a drain-to-source voltage (Vdss) of 30V and a continuous drain current (Id) of 5A at 25°C. The MOSFET features a low on-resistance of 42mOhm at 5A and 10V, minimizing conduction losses. Its gate threshold voltage (Vgs(th)) is 2.5V at 1mA, with a maximum gate-source voltage of ±20V.

 

This component is packaged in an 8-SOP configuration, measuring approximately 3.90mm wide, suitable for surface mounting on printed circuit boards. It has a maximum power dissipation of 2W (Ta) and can operate at junction temperatures up to 150°C.

 

The RSS050P03FU6TB is suitable for various switching and amplification applications where a compact, surface-mount P-Channel MOSFET is required.

RSS050P03FU6TB Quick Information

Product Type: MOSFET
Canonical Name: ROHM Semiconductor RSS050P03FU6TB P-Channel MOSFET
Subcategory: Single

RSS050P03FU6TB Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

RSS050P03FU6TB Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

RSS050P03FU6TB Features

  • P-Channel MOSFET with 30V drain-source voltage.
  • Continuous drain current of 5A at 25°C.
  • Low on-resistance of 42mOhm at 5A, 10V.
  • Operates at junction temperatures up to 150°C.
  • Surface mount 8-SOP package for compact designs.

RSS050P03FU6TB Applications

  • Suitable for power switching applications.
  • Used in signal amplification circuits.
  • Ideal for compact electronic designs.
  • General purpose MOSFET applications.

RSS050P03FU6TB FAQs

5 frequently asked questions generated from this part’s specifications.
What is the maximum drain-to-source voltage for the RSS050P03FU6TB?

The maximum drain-to-source voltage (Vdss) is 30V.

What is the continuous drain current rating?

The continuous drain current is 5A at 25°C.

What is the maximum on-resistance of this MOSFET?

The maximum on-resistance is 42mOhm when measured at 5A drain current and 10V gate-source voltage.

What is the operating temperature range?

The operating temperature range is up to 150°C (TJ).

What package type is the RSS050P03FU6TB supplied in?

It is supplied in an 8-SOP package for surface mounting.

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