| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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1,290 pcs
|
1290 pcs | On Request | 1 | On Request | On Request | 807 | On Request | On Request |
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| Input Capacitance (Ciss) (Max) @ Vds | |
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| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
This ROHM Semiconductor RSS040P03FU6TB is a P-Channel MOSFET designed for power switching applications. It offers a drain-source voltage of 30V and a continuous drain current of 4A at 25°C ambient temperature. The MOSFET exhibits a low static drain-source on-state resistance, with a maximum of 58mOhm at 4A drain current and 10V gate-source voltage.
Key electrical characteristics include a gate threshold voltage of 1.0V (typical) and an input capacitance of 800pF at 10V. The device is built with an integrated G-S protection diode. It is packaged in an 8-SOP (Surface Mount) package, measuring 3.9mm x 6.0mm, suitable for space-constrained designs.
Applications include power switching and DC/DC converters. The operating temperature range is from -55°C to +150°C, with a maximum channel temperature of 150°C and a total power dissipation of 2W at 25°C ambient.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
-30V minimum.
4A at 25°C ambient.
58mΩ maximum at ID=-4A.
-1V nominal at VDS=-10V, ID=-1mA.
8-SOIC (0.154", 3.90mm Width) surface mount, also known as 8-SOP.
Channel temperature up to 150°C, storage temperature from -55 to +150°C.
2.5nC typical at ID=-4A, VGS=-5V.