| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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2,750 pcs
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2750 pcs | On Request | 1 | On Request | On Request | 12+ | On Request | On Request |
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The ROHM Semiconductor RSR025P03TL is a P-Channel MOSFET suitable for switching applications. It offers a drain-source voltage of 30V and a maximum continuous drain current of 0.8A at 25°C. The device boasts a low on-resistance, with a maximum of 98mOhm at an ID of 2.5A and VGS of 10V.
This MOSFET is housed in a space-saving TSMT3 surface mount package (SC-96). It operates within a channel temperature range of -55°C to +150°C and has a total power dissipation of 1W (Ta) when mounted on a ceramic board. Key electrical characteristics include a gate threshold voltage of -1V and an input capacitance of 460pF.
Designed for efficiency and space savings, the RSR025P03TL is a reliable component for various electronic designs requiring P-channel MOSFET functionality.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The RSR025P03TL is packaged in a TSMT3 (SC-96) surface mount package.
The maximum junction temperature is 150°C, and the storage temperature range is -55°C to 150°C.
The drain-source voltage rating is 30V (P-channel, -30V).
The gate threshold voltage is typically -1V at VDS = -10V, ID = -1mA.
The maximum on-resistance is 98mOhm at VGS = -10V, ID = -2.5A; 115mOhm at VGS = -4.5V, ID = -1.2A; and 160mOhm at VGS = -4V, ID = -1.2A.
The total gate charge is 5.4nC typical at ID = -2.5A, VDD = -15V, VGS = -10V.
The maximum continuous drain current is -0.8A (0.8A absolute) at ambient temperature 25°C.