| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
5,234 pcs
|
5234 pcs | On Request | 1 | On Request | On Request | 09+ | On Request | On Request | |
|
2,950 pcs
|
2950 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Storage Temperature | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The RSR025N03TL from ROHM Semiconductor is an N-channel MOSFET designed for power switching applications. It features a drain-source voltage (Vdss) of 30V and a continuous drain current (Id) of 2.5A at 25°C ambient temperature.
This MOSFET offers a low on-resistance of 70mOhm at a drain current of 2.5A and a gate-source voltage of 10V. The gate threshold voltage (Vgs(th)) is a maximum of 2.5V at 1mA, indicating it can be driven by lower voltage signals. The input capacitance (Ciss) is 165pF at 10V drain-source voltage, and the gate charge (Qg) is 4.1nC at 2.5A drain current.
Designed for surface mounting, the RSR025N03TL comes in a compact TSMT3 package. Its applications include power switching and DC/DC converters. The device includes a built-in gate-source protection diode.
Key electrical characteristics include a maximum gate-source voltage of 20V and a maximum power dissipation of 1W (Ta=25°C). The operating temperature range is -55°C to 150°C.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source breakdown voltage (Vdss) is 30V.
The continuous drain current is 2.5A.
The maximum on-resistance is 70mOhm at 2.5A drain current and 10V gate-source voltage.
The gate threshold voltage is a maximum of 2.5V at 1mA drain current.
It is in a TSMT3 surface mount package.
The operating temperature range is -55°C to 150°C.