| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
3,000 pcs
|
3000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
3,000 pcs
|
3000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The RSR020P05TL is a P-Channel enhancement-mode MOSFET manufactured by ROHM Semiconductor. It is designed for medium-power switching applications, offering a maximum drain-to-source voltage of 45 V and a continuous drain current of 2 A at ambient temperature. The device features a low on-resistance of 190 mOhm maximum at 2 A drain current and 10 V gate-to-source voltage, enabling efficient power management.
The MOSFET has a maximum power dissipation of 540 mW at ambient temperature, with an input capacitance of 500 pF at 10 V drain-to-source voltage and a gate charge of 4.5 nC at 4.5 V. The threshold voltage is 3 V maximum at 1 mA drain current. The gate-to-source voltage rating is ±20 V. The device operates at a maximum junction temperature of 150 °C.
Packaged in the compact TSMT3 (also known as SC-96) surface-mount package, the RSR020P05TL is suitable for automated assembly. The package supports surface-mount mounting, making it appropriate for space-constrained designs in consumer and industrial electronics.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
45 V.
TSMT3 (also known as SC-96) surface-mount package.
150 °C.