| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
4,100 pcs
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4100 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The RSR020P05FRATL from ROHM Semiconductor is a P-Channel MOSFET with a drain-to-source voltage (Vdss) of 45V. It is designed for surface mount applications and comes in a TSMT3 package (SC-96).
Key electrical characteristics include a maximum continuous drain current of 2A (Ta) and a maximum on-resistance (Rds On) of 190mOhm at 2A and 10V Vgs. The gate charge (Qg) is 4.5nC at 4.5V Vgs, and the gate threshold voltage (Vgs(th)) is a maximum of 3V at 1mA.
This MOSFET operates at temperatures up to 150°C (TJ) and has a maximum power dissipation of 540mW (Ta). The input capacitance (Ciss) is 500pF at 10V Vds. It features a maximum gate-source voltage (Vgs) of ±20V.
This component is suitable for various electronic designs requiring a P-Channel MOSFET with these specifications. Its surface mount package facilitates integration into compact circuit boards.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
45V.
TSMT3 (SC-96) surface mount package.
150°C (junction temperature).
2A at ambient temperature.
190mOhm maximum at 2A drain current and 10V gate-source voltage.
3V maximum at 1mA drain current.
4.5nC maximum at 4.5V gate-source voltage.