| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
4,850 pcs
|
4850 pcs | On Request | 1 | On Request | On Request | 24+ | On Request | On Request | |
|
363 pcs
|
363 pcs | On Request | 1 | On Request | On Request | 16+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Forward Voltage | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Storage Temperature | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The RSQ030P03TR from ROHM Semiconductor is a P-Channel MOSFET designed for DC-DC converter applications. It offers a drain-source voltage (Vdss) of 30V and a continuous drain current (Id) of 3A at 25°C. Key electrical characteristics include a low static drain-source on-state resistance of 80mOhm at 3A and 10V gate-source voltage, and a gate threshold voltage (Vgs(th)) of 2.5V at 1mA.
This MOSFET operates within a channel temperature range of up to 150°C and has a total power dissipation of 1.25W. It is suitable for low voltage drive applications, requiring a drive voltage between 4V and 10V. The device is packaged in a surface-mount SOT-23-6 Thin (TSMT6) package, making it suitable for compact designs.
Features such as high-speed switching and a high power package contribute to its utility in power management circuits. The device also includes an ESD protection diode and a body diode.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The minimum drain-source breakdown voltage is -30V at VGS=0V.
The maximum continuous drain current is 3A at 25°C ambient.
The maximum on-resistance is 90mΩ at VGS=-10V and ID=-3A, with a typical value of 80mΩ.
It is available in a SOT-23-6 Thin / TSOT-23-6 package, specifically the TSMT6 (SC-95) surface-mount package.
The maximum junction temperature is 150°C and the storage temperature range is -55°C to +150°C.
The gate threshold voltage ranges from a minimum of -1.0V to a maximum of -2.5V at ID=-1.5A.