| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
742 pcs
|
742 pcs | On Request | 1 | On Request | On Request | 13+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The ROHM Semiconductor RSJ650N10TL is a single N-Channel MOSFET designed for power applications. It features a maximum drain-source voltage (Vdss) of 100V and a continuous drain current (Id) of 65A at ambient temperature.
Key electrical characteristics include a maximum on-resistance (Rds On) of 9.1mOhm at 32.5A and 10V, and a gate threshold voltage (Vgs(th)) of 2.5V at 1mA. The MOSFET has a maximum gate-source voltage (Vgs) of ±20V and an input capacitance (Ciss) of 10780pF at 25V. Gate charge (Qg) is rated at 260nC at 10V.
This device operates at temperatures up to 150°C (TJ) and has a maximum power dissipation of 100W (Tc). It is housed in a TO-263-3, D²Pak (2 Leads + Tab), TO-263AB package and utilizes surface mount technology.
The RSJ650N10TL is built using MOSFET (Metal Oxide) technology.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage (Vdss) is 100V.
The continuous drain current (Id) is 65A at ambient temperature.
The maximum on-resistance (Rds On) is 9.1mOhm at 32.5A and 10V.
It is in a TO-263-3, D²Pak (2 Leads + Tab), TO-263AB package.
It is designed for surface mounting.
The operating temperature is up to 150°C (TJ).