| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,300 pcs
|
2300 pcs | On Request | 1 | On Request | On Request | 12+ | On Request | On Request |
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| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Forward Voltage | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| SVHC Present | |
| Storage Temperature | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The ROHM Semiconductor RSH065N03TB1 is a silicon N-channel MOSFET suitable for power switching and DC/DC converter applications. It offers a drain-source voltage of 30V and a continuous drain current of 6.5A at 25°C.
Key electrical characteristics include a low on-resistance, with a maximum of 27mOhm at 6.5A and 10V Vgs. The gate threshold voltage ranges from 1.0V to 2.5V at 1mA. It also features a typical input capacitance of 430pF and a typical gate charge of 8.6nC at 5V Vgs.
This MOSFET is housed in a compact 8-SOP surface mount package. It has a maximum power dissipation of 2W and an operating temperature range of -55°C to +150°C. The device includes a built-in G-S protection diode for static electricity protection.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source voltage (Vdss) is 30V.
The maximum continuous drain current is 6.5A.
The maximum on-resistance is 27mOhm at 6.5A and 10V Vgs.
The RSH065N03TB1 is supplied in an 8-SOP package for surface mounting.
The operating temperature range is -55°C to +150°C.
Yes, it includes a built-in G-S protection diode.