| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
365 pcs
|
365 pcs | On Request | 1 | On Request | On Request | 17+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Style | |
| Mounting Type | |
| Operating Temperature | |
| Operating Voltage | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Storage Temperature | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The ROHM Semiconductor RSD131P10TL is a P-Channel MOSFET designed for various electronic applications. It features a maximum drain-source voltage of 100V and a continuous drain current of 13A.
The MOSFET has an on-resistance of 200mOhm at 6.5A and 10V, with a gate threshold voltage of 2.5V at 1mA. Key electrical parameters include input capacitance of 2400pF at 25V and a gate charge of 40nC at 10V. The maximum gate-source voltage is ±20V.
This device operates within a temperature range of -55°C to 150°C (TJ). It is constructed using MOSFET (Metal Oxide) technology and comes in a TO-252-3, DPak (2 Leads + Tab), SC-63 package, suitable for surface mounting.
Power dissipation is rated at 850mW (Ta) and 20W (Tc). The part is identified by its supplier device package code CPT3.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.27 | $2.27 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage is 100V.
The continuous drain current is 13A.
The maximum on-resistance is 200mOhm at 6.5A and 10V.
The operating temperature range is up to 150°C (TJ).
It is supplied in a TO-252-3, DPak (2 Leads + Tab), SC-63 package.
Yes, it is RoHS3 Compliant.