| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
302 pcs
|
302 pcs | On Request | 1 | On Request | On Request | 13+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Storage Temperature | |
| Supplier Device Package | |
| Supplier Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The ROHM Semiconductor RSD100N10TL is a single N-Channel MOSFET with a drain-source voltage of 100V and a continuous drain current of 10A. It features a maximum on-resistance of 133mOhm at 5A and 10V gate-source voltage. The gate charge is 18nC at 10V, and the gate threshold voltage is 2.5V at 1mA.
This MOSFET is designed for surface mount applications and comes in a TO-252-3, DPak (2 Leads + Tab), SC-63 package, also known as CPT3. It operates at temperatures up to 150°C (TJ) and has a maximum power dissipation of 20W (Tc).
Key electrical characteristics include an input capacitance of 700pF at 25V and a maximum gate-to-source voltage of ±20V. The technology used is MOSFET (Metal Oxide).
| Qty | Low | High |
|---|---|---|
| 1+ | $2.27 | $2.27 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source voltage (Vdss) is 100V.
The maximum continuous drain current is 10A (Ta).
The Rds On is a maximum of 133mOhm at 5A drain current and 10V gate-source voltage.
The operating temperature is up to 150°C (TJ).
It is in a TO-252-3, DPak (2 Leads + Tab), SC-63 package.