| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,910 pcs
|
1910 pcs | On Request | 1 | On Request | On Request | 15+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Storage Temperature | |
| Supplier Device Package | |
| Supplier Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The ROHM Semiconductor RSD050N10TL is a single N-Channel MOSFET with a drain-to-source voltage (Vdss) of 100V. It is designed for surface mount applications and comes in a TO-252-3, DPak (2 Leads + Tab), SC-63 package.
Key electrical characteristics include a maximum on-resistance (Rds On) of 190mOhm at 5A and 10Vgs, and a gate threshold voltage (Vgs(th)) of 2.5V at 1mA. The device has a maximum continuous drain current of 5A (Ta) and a maximum power dissipation of 15W (Tc). The operating temperature range is -150°C to 150°C (TJ).
This MOSFET is suitable for various power management and switching applications where a robust N-Channel device is required. Its surface mount package facilitates integration into compact electronic designs.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.27 | $2.27 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-to-source voltage (Vdss) is 100V.
The maximum input capacitance (Ciss) is 530 pF at Vds = 25V.
The maximum Rds On is 190mOhm at 5A and 10V Vgs.
It comes in a TO-252-3, CPT3 package designed for surface mounting.
The maximum operating temperature is 150°C.
Yes, it is RoHS3 compliant.