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RS1E350BNTB The ROHM Semiconductor RS1E350BNTB is an N-Channel MOSFET designed for surface mount applications. It features a 30V drain-source voltage and a continuous drain current of 35A.
Mfr Part #:

RS1E350BNTB

Available from 1 distributors
Mfr Name: ROHM Semiconductor
ROHM Semiconductor
The ROHM Semiconductor RS1E350BNTB is an N-Channel MOSFET designed for surface mount applications. It features a 30V drain-source voltage and a continuous drain current of 35A.
✓ Total Stock: 100 pcs
$ Price Range: $2.27

RS1E350BNTB Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Smaxon Electronics ✓
Non-Authorised Inventory information
100 pcs
On Request
100 pcs On Request 1 On Request On Request 1441+ On Request On Request
DistyParts aggregates offers from multiple distributors. Final prices, lead times and terms are subject to the distributors' discretion and may change without prior notice. DistyParts is not liable for any discrepancies.

RS1E350BNTB Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Storage Temperature
Supplier Device Package
Supplier Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id
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RS1E350BNTB Description

Short technical summary and product information.

The ROHM Semiconductor RS1E350BNTB is a single N-Channel MOSFET designed for various electronic applications. It offers a drain-source voltage (Vdss) of 30V and can handle a continuous drain current (Id) of 35A at 25°C.

 

This MOSFET features a low on-resistance (Rds On) of 1.7mOhm at 35A and 10V Vgs, with a gate threshold voltage (Vgs(th)) of 2.5V at 1mA. The input capacitance (Ciss) is 7900 pF at 15V Vds, and the gate charge (Qg) is 185 nC at 10V Vgs. It operates within a temperature range of -55°C to 150°C (TJ).

 

The device is housed in an 8-PowerTDFN package and is designed for surface mounting. The maximum power dissipation is rated at 35W (Tc). The Vgs is limited to ±20V, and drive voltages range from 4.5V to 10V for optimal Rds On performance.

 

Compliance information indicates RoHS3 compliance, MSL 1, and REACH unaffected status, though these are unverified.

RS1E350BNTB Quick Information

Product Type: MOSFET
Canonical Name: RS1E350BNTB N-Channel MOSFET
Subcategory: N-Channel

RS1E350BNTB Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

RS1E350BNTB Estimated Pricing

Qty Low High
1+ $2.27 $2.27

Estimated market price range - modelled values for guidance only, not live distributor offers.

RS1E350BNTB Features

  • N-Channel MOSFET technology.
  • 30V drain-source voltage rating.
  • 35A continuous drain current.
  • Low 1.7mOhm Rds On.
  • Surface mount 8-PowerTDFN package.

RS1E350BNTB Applications

  • Used in power switching circuits
  • Suitable for motor control applications
  • Ideal for power management modules
  • Designed for high-current switching

RS1E350BNTB FAQs

6 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage for the RS1E350BNTB?

The drain-source voltage (Vdss) for the RS1E350BNTB is 30V.

What is the maximum continuous drain current?

The maximum continuous drain current (Id) is 35A at 25°C.

What is the on-resistance of this MOSFET?

The Rds On is a maximum of 1.7mOhm when the Id is 35A and Vgs is 10V.

What is the operating temperature range?

The operating temperature range is up to 150°C (TJ).

What package type is the RS1E350BNTB in?

It is available in an 8-PowerTDFN package and an 8-HSOP supplier package.

How is this MOSFET mounted?

This MOSFET is designed for surface mount installation.

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