RS1E321GNTB1 The ROHM Semiconductor RS1E321GNTB1 is an N-Channel MOSFET with a 30V drain-source voltage and a continuous current rating of 32A (Ta) / 80A (Tc). It features a Surface Mount package.
Mfr Part #:

RS1E321GNTB1

Available from 2 distributors
Mfr Name: ROHM Semiconductor
ROHM Semiconductor
The ROHM Semiconductor RS1E321GNTB1 is an N-Channel MOSFET with a 30V drain-source voltage and a continuous current rating of 32A (Ta) / 80A (Tc). It features a Surface Mount package.
✓ Total Stock: 7,500 pcs
$ Price Range: $2.27

RS1E321GNTB1 Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
5,000 pcs
5000 pcs On Request 1 On Request On Request 18+ On Request On Request
Non-Authorised Inventory information
2,500 pcs
2500 pcs On Request 1 On Request On Request On Request On Request On Request

RS1E321GNTB1 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

RS1E321GNTB1 Description

Short technical summary and product information.

The ROHM Semiconductor RS1E321GNTB1 is a single N-Channel MOSFET designed for power switching applications. It offers a drain-to-source voltage (Vdss) of 30V and can handle continuous drain currents of 32A under ambient temperature (Ta) conditions and 80A under case temperature (Tc) conditions.

 

This MOSFET utilizes MOSFET (Metal Oxide) technology and has a maximum power dissipation of 3W (Ta). The operating temperature range is up to 150°C (TJ). Key electrical characteristics include a maximum gate-source voltage (Vgs) of ±20V, a gate threshold voltage (Vgs(th)) of 2.5V (at 1mA), and a maximum on-resistance (Rds On) of 2.1mOhm (at 32A, 10V).

 

The RS1E321GNTB1 is available in a Surface Mount package, specifically the 8-PowerTDFN or 8-HSOP configuration. Its robust specifications make it suitable for various power management and switching circuits where reliability and performance are critical.

RS1E321GNTB1 Quick Information

Product Type: MOSFET
Canonical Name: ROHM Semiconductor RS1E321GNTB1 N-Channel MOSFET
Subcategory: Single

RS1E321GNTB1 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

RS1E321GNTB1 Estimated Pricing

Qty Low High
1+ $2.27 $2.27

Estimated market price range - modelled values for guidance only, not live distributor offers.

RS1E321GNTB1 Features

  • N-Channel MOSFET technology.
  • 30V drain-to-source voltage.
  • 32A continuous current (Ta).
  • 80A continuous current (Tc).
  • Surface Mount 8-PowerTDFN package.

RS1E321GNTB1 Applications

  • Suitable for power switching circuits.
  • Used in power management applications.
  • Ideal for high current applications.
  • Designed for efficient power conversion.

RS1E321GNTB1 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-to-source voltage of the RS1E321GNTB1?

The maximum drain-to-source voltage is 30 V.

What is the maximum input capacitance at Vds = 15 V?

The maximum input capacitance is 2850 pF at 15 V.

What is the maximum gate threshold voltage at Id = 1mA?

The maximum gate threshold voltage is 2.5 V at 1mA.

What is the maximum gate drive voltage for maximum Rds On?

The minimum gate drive voltage for maximum Rds On is 4.5 V.

What is the maximum on-resistance at 32A and 10V Vgs?

The on-resistance is 2.1 milliohms.

What is the maximum operating temperature of the device?

The maximum operating temperature is 150°C.

What package type is used for the RS1E321GNTB1?

It is packaged in an 8-PowerTDFN case with an 8-HSOP package.

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