| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
5,000 pcs
|
5000 pcs | On Request | 1 | On Request | On Request | 18+ | On Request | On Request | |
|
2,500 pcs
|
2500 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The ROHM Semiconductor RS1E321GNTB1 is a single N-Channel MOSFET designed for power switching applications. It offers a drain-to-source voltage (Vdss) of 30V and can handle continuous drain currents of 32A under ambient temperature (Ta) conditions and 80A under case temperature (Tc) conditions.
This MOSFET utilizes MOSFET (Metal Oxide) technology and has a maximum power dissipation of 3W (Ta). The operating temperature range is up to 150°C (TJ). Key electrical characteristics include a maximum gate-source voltage (Vgs) of ±20V, a gate threshold voltage (Vgs(th)) of 2.5V (at 1mA), and a maximum on-resistance (Rds On) of 2.1mOhm (at 32A, 10V).
The RS1E321GNTB1 is available in a Surface Mount package, specifically the 8-PowerTDFN or 8-HSOP configuration. Its robust specifications make it suitable for various power management and switching circuits where reliability and performance are critical.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.27 | $2.27 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-to-source voltage is 30 V.
The maximum input capacitance is 2850 pF at 15 V.
The maximum gate threshold voltage is 2.5 V at 1mA.
The minimum gate drive voltage for maximum Rds On is 4.5 V.
The on-resistance is 2.1 milliohms.
The maximum operating temperature is 150°C.
It is packaged in an 8-PowerTDFN case with an 8-HSOP package.