| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
291 pcs
|
291 pcs | On Request | 1 | On Request | On Request | 1543+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Storage Temperature | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The RS1E200BNTB is an N-Channel MOSFET manufactured by ROHM Semiconductor. It features a drain-to-source voltage of 30V and a continuous drain current of 20A at 25°C. The device has a maximum Rds On of 3.9 milliohm when tested at 20A and 10V Vgs. It requires a drive voltage of 4.5V or 10V for optimal Rds On performance. The gate charge at 10V Vgs is 59 nanocoulombs, and the input capacitance is 3100 picofarads at 15V Vds. The device is packaged in an 8-HSOP surface-mount package with an 8-PowerTDFN case, and it is supplied on a Digi-Reel® tape and reel. It is RoHS3 compliant, with a maximum operating temperature of 150°C and a maximum power dissipation of 3W at ambient temperature.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.27 | $2.27 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage (Vdss) is 30V.
The maximum continuous drain current (Id) at 25°C is 20A.
It uses an 8-HSOP surface mount package.
Yes, it is RoHS3 compliant.
The maximum operating temperature is 150°C.