RS1E150GNTB The ROHM Semiconductor RS1E150GNTB is an N-Channel MOSFET with a 30V drain-source voltage and 15A continuous current. It is designed for surface mounting in an 8-HSOP package.
Mfr Part #:

RS1E150GNTB

Available from 2 distributors
Mfr Name: ROHM Semiconductor
ROHM Semiconductor
The ROHM Semiconductor RS1E150GNTB is an N-Channel MOSFET with a 30V drain-source voltage and 15A continuous current. It is designed for surface mounting in an 8-HSOP package.
✓ Total Stock: 838 pcs
$ Price Range: $2.27

RS1E150GNTB Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
493 pcs
493 pcs On Request 1 On Request On Request 19+ On Request On Request
Non-Authorised Inventory information
345 pcs
345 pcs On Request 1 On Request On Request On Request On Request On Request

RS1E150GNTB Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Storage Temperature
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

RS1E150GNTB Description

Short technical summary and product information.

The ROHM Semiconductor RS1E150GNTB is a single N-Channel MOSFET designed for various electronic applications. It features a maximum drain-source voltage (Vdss) of 30V and a continuous drain current (Id) of 15A at ambient temperature.

 

This MOSFET offers a low on-resistance (Rds On) of 8.8mOhm at 15A and 10V Vgs, with a gate threshold voltage (Vgs(th)) of 2.5V at 1mA. The input capacitance (Ciss) is 590pF at 15V Vds. It operates within a temperature range of -55°C to 150°C (TJ).

 

The device is constructed using MOSFET (Metal Oxide) technology and has a maximum gate-to-source voltage (Vgs) of ±20V. Its power dissipation is rated at 3W (Ta) and 22.9W (Tc).

 

The RS1E150GNTB comes in an 8-HSOP package and is designed for surface mounting. It is compliant with RoHS3 standards and has an MSL rating of 1.

RS1E150GNTB Quick Information

Product Type: MOSFET
Canonical Name: RS1E150GNTB N-Channel MOSFET
Subcategory: N-Channel

RS1E150GNTB Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

RS1E150GNTB Estimated Pricing

Qty Low High
1+ $2.27 $2.27

Estimated market price range - modelled values for guidance only, not live distributor offers.

RS1E150GNTB Features

  • N-Channel MOSFET with 30V drain-source voltage.
  • 15A continuous drain current capability.
  • Low 8.8mOhm Rds On at 10V Vgs.
  • Operates up to 150°C junction temperature.
  • Surface mount 8-HSOP package.

RS1E150GNTB Applications

  • Suitable for power switching circuits.
  • Used in general purpose electronics.
  • Ideal for compact designs.
  • Applications requiring high current.

RS1E150GNTB FAQs

6 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage for the RS1E150GNTB?

The maximum drain-source voltage (Vdss) for the RS1E150GNTB is 30V.

What is the continuous drain current of the RS1E150GNTB?

The continuous drain current (Id) for the RS1E150GNTB is 15A at ambient temperature.

What is the on-resistance of the RS1E150GNTB?

The maximum on-resistance (Rds On) for the RS1E150GNTB is 8.8mOhm at 15A drain current and 10V gate-source voltage.

What is the operating temperature range for this MOSFET?

The operating temperature for the RS1E150GNTB is 150°C (TJ).

What package type is the RS1E150GNTB available in?

The RS1E150GNTB is available in an 8-HSOP package.

How is the RS1E150GNTB mounted?

The RS1E150GNTB is designed for surface mounting.

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