| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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513 pcs
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513 pcs | On Request | 1 | On Request | On Request | 09+ | On Request | On Request |
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| Technology |
This P-Channel MOSFET, part number RRS075P03TB1 from Rohm Semiconductor, is designed for various electronic applications requiring efficient switching. It features a maximum drain-to-source voltage (Vdss) of 30V and can handle a continuous drain current (Id) of 7.5A at 25°C ambient temperature.
The device utilizes Metal Oxide Semiconductor (MOSFET) technology, offering a P-Channel configuration. It is packaged in an 8-SOIC (Small Outline Integrated Circuit) package, measuring 0.154 inches (3.90mm) in width, making it suitable for surface mount assembly.
The RRS075P03TB1 is specified with a RoHS3 compliant status and an MSL 1 rating, indicating its suitability for a wide range of manufacturing processes. Its compact size and electrical characteristics make it a versatile component for power management and signal switching circuits.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.27 | $2.27 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-to-source voltage (Vdss) for the RRS075P03TB1 is 30V.
The continuous drain current (Id) at 25°C for the RRS075P03TB1 is 7.5A.
The RRS075P03TB1 is a P-Channel MOSFET.
The RRS075P03TB1 MOSFET is supplied in an 8-SOIC package.
The RRS075P03TB1 is designed for surface mounting.