| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,500 pcs
|
2500 pcs | On Request | 1 | On Request | On Request | 1635+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| AEC Qualified | |
| Automotive Grade | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Industrial Grade | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Medical Grade | |
| Military Grade | |
| Mounting Type | |
| Operating Temperature | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Vgs(th) (Max) @ Id |
The RRH050P03GZETB is a P-Channel MOSFET manufactured by Rohm Semiconductor. This component is designed for various electronic applications requiring efficient switching and power control.
Key electrical specifications include a maximum drain-to-source voltage (Vdss) of 30V and a continuous drain current (Id) of 5A at 25°C. The on-resistance (Rds On) is specified as a maximum of 50mOhm at 5A and 10V gate-source voltage. The gate threshold voltage (Vgs(th)) is a maximum of 2.5V at 1mA. The maximum gate-to-source voltage is ±20V.
This MOSFET features a maximum power dissipation of 650mW at 25°C ambient temperature and an operating junction temperature of up to 150°C. The input capacitance (Ciss) is a maximum of 850pF at 10V drain-source voltage. The drive voltage range for Rds On is 4V to 10V.
The RRH050P03GZETB is packaged in an 8-SOIC (Small Outline Integrated Circuit) package, designed for surface mounting. This package type is common in applications where space is a consideration and automated assembly is utilized.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.27 | $2.27 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-to-source voltage (Vdss) for the RRH050P03GZETB is 30V.
The continuous drain current (Id) for the RRH050P03GZETB at 25°C is 5A.
The maximum on-resistance (Rds On) for the RRH050P03GZETB is 50mOhm at 5A and 10V gate-source voltage.
The gate threshold voltage (Vgs(th)) for the RRH050P03GZETB is a maximum of 2.5V at 1mA.
The maximum operating junction temperature (TJ) for the RRH050P03GZETB is 150°C.
The RRH050P03GZETB is supplied in an 8-SOIC package for surface mounting.