| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
226,000 pcs
|
226000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Mounting Type | |
| Rds On (Max) @ Id, Vgs | |
| SVHC Present |
The Renesas RQJ0301HGDQS is a P-Channel Power MOSFET designed for various power management applications. It features a maximum drain-source voltage of -30V and a continuous drain current capability of 5.2A. The on-resistance (Rds On) is specified at a maximum of 48mOhm under typical test conditions.
This MOSFET is packaged in a surface-mount SC-62 case, suitable for compact electronic designs. Its specifications make it a candidate for switching and amplification tasks in power circuits. The component is manufactured by Renesas Electronics Corporation.
Key electrical characteristics include its -30V breakdown voltage and 5.2A current handling. The low on-resistance of 48mOhm contributes to efficient power transfer, minimizing heat generation during operation. This makes it suitable for applications requiring reliable power control.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.75 | $0.75 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
-30V
5.2A
48 mOhm
SC-62
RoHS3 Compliant
1 Unlimited