| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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36,160 pcs
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36160 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name |
The Renesas RQA0009SXAQS is a Silicon N-Channel MOS FET designed for RF applications. This component has a specified Drain-Source Voltage of 30V.
As a MOS FET, it offers specific electrical characteristics suitable for amplification tasks within RF circuits. The N-Channel configuration is standard for many power and signal switching applications.
Further details regarding its specific applications, package type, and detailed electrical parameters would typically be found in the manufacturer's datasheet. This part is listed under the RF Amplifiers category.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The Drain-Source Voltage is 30V.
It is a Silicon N-Channel MOS FET.
The RoHS status is RoHS3 Compliant.
The Moisture Sensitivity Level is 1 Unlimited.
The REACH status is REACH Unaffected.