| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
150,667 pcs
|
150667 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Storage Temperature |
The Renesas RQA0004LXAQS is a Silicon N-Channel MOS FET characterized by its high output power, high gain, and high efficiency. It delivers a typical output power of +29.7 dBm with a linear gain of 21 dB and a Power Added Efficiency (PAE) of 68% at 520 MHz.
This device is designed for surface mounting and comes in a compact package (UPAK, code PLZZ0004CA-A). Key electrical characteristics include a drain to source voltage of 16V, a gate to source voltage range of ±5V, and a maximum drain current of 0.3A. The typical input capacitance is 10 pF, output capacitance is 5 pF, and reverse transfer capacitance is 0.4 pF at 1 MHz.
Absolute maximum ratings specify a channel temperature up to 150°C and a storage temperature range of -50°C to +150°C. The device is sensitive to electrostatic discharge, requiring careful handling procedures.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.75 | $0.75 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The typical output power is +29.7 dBm at 520 MHz with a drain-to-source voltage of 6V and drain current of 50 mA.
The typical power added efficiency is 68% at 520 MHz with a drain-to-source voltage of 6V and drain current of 50 mA.
The maximum drain current is 0.3 A.
The package type is UPAK with package code PLZZ0004CA-A.
The RoHS status is RoHS3 Compliant.
The Moisture Sensitivity Level is 1 Unlimited.