| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
3,330 pcs
|
3330 pcs | On Request | 1 | On Request | On Request | 12+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| FET Type | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Lead Spacing | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Storage Temperature | |
| Supplier Device Package | |
| Supplier Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The Renesas RQA0002DNSTB-E is a Silicon N-Channel MOS Field-Effect Transistor. It is designed for applications requiring high output power, high gain, and high efficiency. Key electrical characteristics include an output power of +39.6 dBm and a power added efficiency of 68% at 520 MHz under specific test conditions (VDS = 7.5 V, IDQ = 200 mA, Pin = +25 dBm).
The device features a drain to source voltage (Vdss) of 16 V and a continuous drain current of 3.8 A. The maximum channel dissipation is rated at 15 W (Tc = 25°C), and the operating temperature can reach up to 150°C.
Packaged in a small outline WSON0504-2 (2-HWSON) surface mount package, the RQA0002DNSTB-E is suitable for compact electronic designs. The pinout includes Gate, Source, and Drain. Handling precautions for electrostatic discharge are recommended.
Electrical specifications include an input capacitance (Ciss) of 102 pF and an output capacitance (Coss) of 50 pF, both measured at 1 MHz. The gate to source cutoff voltage (Vgs(off)) is typically 0.4 V.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.27 | $2.27 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
+39.6 dBm
68 %
16 V
WSON0504-2
150°C