| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
3,000 pcs
|
3000 pcs | On Request | 1 | On Request | On Request | 18+ | On Request | On Request | |
|
145 pcs
|
145 pcs | On Request | 1 | On Request | On Request | 18+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Continuous Forward Current | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Junction Temperature | |
| Lead Spacing | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Quantity | |
| Rds On (Max) @ Id, Vgs | |
| Storage Temperature | |
| Supplier Device Package | |
| Tape & Reel | |
| Tape Width | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The ROHM Semiconductor RQ3E160ADTB is a high-performance N-Channel MOSFET designed for various switching applications. It offers a maximum drain-source voltage (Vdss) of 30V and a continuous drain current (ID) of 16A at 25°C.
Key electrical characteristics include a low maximum on-resistance (Rds(on)) of 4.5mΩ at 16A and 10V gate-source voltage, and a gate threshold voltage (Vgs(th)) ranging from 1.0V to 2.5V at 1mA. The MOSFET also features a built-in gate-source protection diode.
This device is available in a compact 8-PowerVDFN package, suitable for surface mounting. It operates within a junction temperature range of -55°C to +150°C and has a power dissipation of 2W at 25°C ambient temperature. The RQ3E160ADTB is RoHS3 compliant and features Pb-free lead plating.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.27 | $2.27 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage (Vdss) is 30V.
The continuous drain current (ID) is 16A at 25°C.
The maximum Rds(on) is 4.5mΩ when the gate-source voltage is 10V and the drain current is 16A.
The gate threshold voltage is between 1.0V and 2.5V at a drain current of 1mA.
It is supplied in an 8-PowerVDFN package.
The operating junction and storage temperature range is -55°C to +150°C.
Yes, the RQ3E160ADTB is RoHS3 compliant.