Mfr Part #:

RQ3E150GNTB

The ROHM Semiconductor RQ3E150GNTB is an N-Channel MOSFET with a 30V drain-source voltage and 15A continuous current. It features a low on-resistance of 6.1mOhm at 15A and 10V gate drive.

✓ Total Stock: 8,974 pcs

$ Price Range: $2.27

RQ3E150GNTB Available from 1 distributor

✓ Authorised

✓ Non-Authorised

Distributor		Stock	Pricing	MOQ	PKG	Lead Time	Date Code	On Order Quantity	On Order Delivery
Smaxon Electronics ✓ Non-Authorised Inventory information	8,974 pcs On Request	8974 pcs	On Request	1	On Request	On Request	19+	On Request	On Request

RQ3E150GNTB Description

Short technical summary and product information.

The RQ3E150GNTB from ROHM Semiconductor is a single N-Channel MOSFET designed for power applications. It offers a drain-to-source voltage (Vdss) of 30V and a continuous drain current (Id) of 15A. The MOSFET exhibits a maximum on-resistance (Rds On) of 6.1mOhm when driven at 10V gate-source voltage (Vgs) and 15A drain current.

This device operates at temperatures up to 150°C (TJ) and has a maximum gate-source voltage (Vgs) of ±20V. The input capacitance (Ciss) is 850pF at 15V, and the gate charge (Qg) is 15.3nC at 10V.

The RQ3E150GNTB is housed in an 8-PowerVDFN package, specifically the 8-HSMT (3.2x3) variant, and is designed for surface mount applications. It has a maximum power dissipation of 2W when mounted on a PCB (Ta) or 17.2W when mounted on a heat sink (Tc).

Compliance information indicates RoHS3 compliance and an MSL rating of 1 Unlimited. REACH status is listed as unaffected.

RQ3E150GNTB Quick Information

Product Type: MOSFET

Canonical Name: RQ3E150GNTB N-Channel MOSFET

Subcategory: Single N-Channel

RQ3E150GNTB Compliance

RoHS Status: RoHS Compliant

Moisture Sensitivity Level (MSL): 1 Unlimited

REACH Status: REACH Unaffected

RQ3E150GNTB Estimated Pricing

Qty	Low	High
1+	$2.27	$2.27

Estimated market price range - modelled values for guidance only, not live distributor offers.

RQ3E150GNTB Features

30V drain-source voltage rating.
15A continuous drain current capability.
6.1mOhm maximum on-resistance.
N-Channel MOSFET technology.
Surface mount 8-PowerVDFN package.

RQ3E150GNTB Applications

Power switching applications.
Efficient load management.
Compact electronic designs.
High-current switching circuits.

RQ3E150GNTB FAQs

7 frequently asked questions generated from this part’s specifications.

What is the maximum drain-to-source voltage for the RQ3E150GNTB?

The maximum drain-to-source voltage (Vdss) for the RQ3E150GNTB is 30V.

What is the continuous drain current of the RQ3E150GNTB?

The RQ3E150GNTB has a continuous drain current rating of 15A.

What is the maximum on-resistance for the RQ3E150GNTB?

The maximum on-resistance (Rds On) for the RQ3E150GNTB is 6.1mOhm at 15A drain current and 10V gate-source voltage.

What is the operating temperature range of the RQ3E150GNTB?

The RQ3E150GNTB can operate at junction temperatures up to 150°C.

What package type is the RQ3E150GNTB in?

The RQ3E150GNTB is supplied in an 8-PowerVDFN package, specifically the 8-HSMT (3.2x3) variant.

Is the RQ3E150GNTB RoHS compliant?

Yes, the RQ3E150GNTB is RoHS3 compliant.

What is the Moisture Sensitivity Level (MSL) for the RQ3E150GNTB?

The Moisture Sensitivity Level (MSL) for the RQ3E150GNTB is 1 Unlimited.

Category	Transistors - FETs, MOSFETs - Single
Manufacturer Name	ROHM Semiconductor
Current	15A (Ta)
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	15.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds	850 pF @ 15 V
Lead Spacing	3.2 mm
Mounting Type	Surface Mount
Operating Temperature	150°C (TJ)
Power Dissipation (Max)	2W (Ta), 17.2W (Tc)
Rds On (Max) @ Id, Vgs	6.1mOhm @ 15A, 10V
Storage Temperature	°C ~ °C
Supplier Device Package	8-HSMT (3.2x3)
Tape & Reel	No
Technology	MOSFET (Metal Oxide)
Vgs (Max)	±20V
Vgs(th) (Max) @ Id	2.5V @ 1mA