Mfr Part #:

RQ3E120ATTB

The RQ3E120ATTB is a P-Channel MOSFET rated for 30V and 12A, suitable for switching applications. It features an Rds On max of 8mOhm and input capacitance of 3200pF.

✓ Total Stock: 449 pcs

$ Price Range: $2.27

RQ3E120ATTB Available from 2 distributors

✓ Authorised

✓ Non-Authorised

Distributor		Stock	Pricing	MOQ	PKG	Lead Time	Date Code	On Order Quantity	On Order Delivery
Smaxon Electronics ✓ Non-Authorised Inventory information	351 pcs On Request	351 pcs	On Request	1	On Request	On Request	19+	On Request	On Request
Rayichip ✓ Non-Authorised Inventory information	98 pcs On Request	98 pcs	On Request	1	On Request	On Request	On Request	On Request	On Request

RQ3E120ATTB Description

Short technical summary and product information.

The RQ3E120ATTB is a P-Channel MOSFET manufactured by ROHM Semiconductor. It is rated for a drain-to-source voltage of 30V and a continuous drain current of 12A. The device has an Rds On maximum of 8 milliohms at Vgs = 10V, and an input capacitance of 3200pF at Vds = 15V. It is packaged in an 8-PowerVDFN case with a surface-mount mounting type, suitable for compact circuit designs.

This MOSFET is designed for switching and load control applications where low on-resistance and high current handling are required. Its maximum operating temperature is 150°C, and it complies with RoHS standards. The device's gate threshold voltage is up to 2.5V at a drain current of 1mA, with a maximum Vgs of ±20V. It is intended for use in power management, motor control, and other electronic switching circuits.

The package is an 8-PowerVDFN, which is surface-mount, facilitating automated assembly and compact device placement. The device's thermal dissipation capacity is up to 2W, making it suitable for various thermal management scenarios in electronic designs.

RQ3E120ATTB Quick Information

Product Type: MOSFET (Metal Oxide)

Canonical Name: MOSFET P-Channel 30V 12A

RQ3E120ATTB Compliance

RoHS Status: RoHS Compliant

Moisture Sensitivity Level (MSL): 1 Unlimited

REACH Status: REACH Unaffected

RQ3E120ATTB Estimated Pricing

Qty	Low	High
1+	$2.27	$2.27

Estimated market price range - modelled values for guidance only, not live distributor offers.

RQ3E120ATTB Features

Maximum drain-to-source voltage of 30V
Continuous drain current of 12A
Maximum Rds On of 8mOhm at Vgs = 10V
Input capacitance of 3200pF at Vds = 15V
Surface mount 8-PowerVDFN package

RQ3E120ATTB Applications

Suitable for power switching in industrial equipment.
Used in motor control and drive circuits.
Ideal for battery management systems.
Applicable in high-speed switching power supplies.
Used in automotive power management modules.

RQ3E120ATTB FAQs

4 frequently asked questions generated from this part’s specifications.

What is the maximum drain-to-source voltage of the RQ3E120ATTB?

The maximum drain-to-source voltage (Vdss) is 30V.

What is the package type of the RQ3E120ATTB?

It is packaged in an 8-PowerVDFN surface-mount case.

What is the maximum operating temperature of the RQ3E120ATTB?

The maximum operating temperature is 150°C.

Is the RQ3E120ATTB RoHS compliant?

Yes, it is RoHS3 compliant.

Category	Transistors - FETs, MOSFETs - Single
Manufacturer Name	ROHM Semiconductor
Current	12 A (Ta)
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	62 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds	3200 pF @ 15 V
Mounting Type	Surface Mount
Operating Temperature	150°C (TJ)
Power Dissipation (Max)	2W (Ta)
Rds On (Max) @ Id, Vgs	8mOhm @ 12A, 10V
Storage Temperature	°C ~ °C
Supplier Device Package	8-HSMT (3.2x3)
Supplier Package	8-HSMT (3.2x3)
Tape & Reel	No
Technology	MOSFET (Metal Oxide)
Vgs (Max)	±20V
Vgs(th) (Max) @ Id	2.5V @ 1mA