Mfr Part #:

RQ1C075UNTR

The ROHM Semiconductor RQ1C075UNTR is an N-Channel MOSFET designed for various applications. It features a 20V drain-to-source voltage and a continuous drain current of 7.5A.

✓ Total Stock: 2,410 pcs

$ Price Range: $2.27

RQ1C075UNTR Available from 2 distributors

✓ Authorised

✓ Non-Authorised

Distributor		Stock	Pricing	MOQ	PKG	Lead Time	Date Code	On Order Quantity	On Order Delivery
Rayichip ✓ Non-Authorised Inventory information	2,210 pcs On Request	2210 pcs	On Request	1	On Request	On Request	On Request	On Request	On Request
Smaxon Electronics ✓ Non-Authorised Inventory information	200 pcs On Request	200 pcs	On Request	1	On Request	On Request	1405+	On Request	On Request

RQ1C075UNTR Description

Short technical summary and product information.

The RQ1C075UNTR from ROHM Semiconductor is a single N-Channel MOSFET. It is designed with a maximum drain-to-source voltage (Vdss) of 20V and a continuous drain current (Ta) of 7.5A. The on-resistance (Rds On) is a maximum of 16mOhm at 7.5A and 4.5Vgs.

This MOSFET has a gate threshold voltage (Vgs(th)) of 1V at 1mA and a maximum gate-to-source voltage (Vgs) of ±10V. Its input capacitance (Ciss) is 1400 pF at 10V, and the gate charge (Qg) is 18 nC at 4.5Vgs. The device operates at a maximum junction temperature of 150°C and has a power dissipation of 700mW (Ta).

The RQ1C075UNTR is housed in a TSMT8 package with a Surface Mount type and flat lead termination. It is suitable for applications requiring efficient switching and power management.

RQ1C075UNTR Quick Information

Product Type: MOSFET

Canonical Name: RQ1C075UNTR N-Channel MOSFET

Subcategory: Single

RQ1C075UNTR Compliance

RoHS Status: RoHS Compliant

Moisture Sensitivity Level (MSL): 1 Unlimited

REACH Status: REACH Unaffected

RQ1C075UNTR Estimated Pricing

Qty	Low	High
1+	$2.27	$2.27

Estimated market price range - modelled values for guidance only, not live distributor offers.

RQ1C075UNTR Features

N-Channel MOSFET technology.
20V drain-to-source voltage.
7.5A continuous drain current.
16mOhm maximum on-resistance.
Surface mount TSMT8 package.

RQ1C075UNTR Applications

Used in switching power supplies
Suitable for motor control circuits
Ideal for load switching applications
Designed for compact electronic assemblies

RQ1C075UNTR FAQs

6 frequently asked questions generated from this part’s specifications.

What is the maximum drain-to-source voltage for the RQ1C075UNTR?

The maximum drain-to-source voltage (Vdss) is 20V.

What is the continuous drain current of the RQ1C075UNTR?

The continuous drain current is 7.5A (Ta).

What is the on-resistance of the RQ1C075UNTR?

The maximum on-resistance (Rds On) is 16mOhm at 7.5A and 4.5Vgs.

What is the operating temperature range for this MOSFET?

The operating temperature is up to 150°C (TJ).

What package type is the RQ1C075UNTR available in?

It is available in an 8-SMD, Flat Lead package, specifically the TSMT8 supplier package.

How is the RQ1C075UNTR mounted?

The mounting type is Surface Mount.

Category	Transistors - FETs, MOSFETs - Single
Manufacturer Name	ROHM Semiconductor
AEC Qualified	No
Automotive Grade	No
Current	7.5A (Ta)
Drain to Source Voltage (Vdss)	20 V
Drive Voltage (Max Rds On, Min Rds On)	1.5V, 4.5V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	18 nC @ 4.5 V
Industrial Grade	No
Input Capacitance (Ciss) (Max) @ Vds	1400 pF @ 10 V
Medical Grade	No
Military Grade	No
Mounting Type	Surface Mount
Operating Temperature	150°C (TJ)
Power Dissipation (Max)	700mW (Ta)
Rds On (Max) @ Id, Vgs	16mOhm @ 7.5A, 4.5V
Storage Temperature	°C ~ °C
Supplier Device Package	TSMT8
Supplier Package	TSMT8
Tape & Reel	No
Technology	MOSFET (Metal Oxide)
Vgs (Max)	±10V
Vgs(th) (Max) @ Id	1V @ 1mA