| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
565,000 pcs
|
565000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name |
The RN4985TE85L,F from Toshiba is a pre-biased bipolar junction transistor (BJT) array designed for various discrete semiconductor applications. This component adheres to RoHS3 compliance standards and has a Moisture Sensitivity Level (MSL) of 1, indicating it is suitable for a wide range of environmental conditions.
As a pre-biased transistor array, it simplifies circuit design by integrating resistors for biasing, making it easier to implement in applications requiring stable transistor operation. The RN4985TE85L,F is part of Toshiba's offerings in the discrete semiconductor product category, specifically within the BJT arrays segment.
This part is categorized under Transistors - Bipolar (BJT) - Arrays, Pre-Biased, signifying its specific function and integration within electronic circuits. Its REACH status is noted as unaffected, providing additional environmental compliance information for designers and procurement specialists.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The RN4985TE85L,F is RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) is 1 Unlimited.
The REACH status is REACH Unaffected.