| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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3,000 pcs
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3000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Toshiba RN4910LF is a silicon PNP/NPN epitaxial type transistor with built-in bias resistors, designed for switching, inverter, interface, and driver circuit applications. It integrates two devices in a compact US6 package, simplifying circuit design and reducing manufacturing processes.
Key electrical characteristics include a collector-emitter voltage of 50V and a collector current of 100mA. The device features a typical DC current gain (hFE) of 120 at 1mA and 5V, with a maximum collector-emitter saturation voltage of 300mV at 250µA and 5mA. The transition frequency (fT) is 200MHz, and the collector output capacitance (Cob) is a maximum of 6pF at 1MHz.
This pre-biased transistor array includes a typical input resistor (R1) value of 4.7kΩ. It has a maximum power dissipation of 200mW and operates within a junction temperature range of -55°C to 150°C. The RN4910LF is suitable for surface mount applications.
Absolute maximum ratings include a collector-base voltage (VCBO) and collector-emitter voltage (VCEO) of 50V, and an emitter-base voltage (VEBO) of 5V. The storage temperature range is -55°C to 150°C.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The collector-emitter voltage (Vce) for the RN4910LF is 50V.
The maximum collector current (Ic) for the RN4910LF is 100mA.
The RN4910LF has a power dissipation rating of 200mW.
The minimum DC current gain (hFE) for the RN4910LF is 120 at 1mA collector current and 5V collector-emitter voltage.
The transition frequency (fT) for the RN4910LF is 200MHz.
The typical input resistor (R1) value in the RN4910LF is 4.7kΩ.
The RN4910LF is a dual pre-biased transistor array containing one NPN and one PNP transistor.