RN4601 The Toshiba RN4601(TE85L,F) is a pre-biased bipolar transistor featuring 1 NPN and 1 PNP configuration. It offers a 50V collector-emitter breakdown voltage and 100mA maximum collector current.
Mfr Part #:

RN4601

Available from 1 distributors
Mfr Name: Toshiba
Toshiba
The Toshiba RN4601(TE85L,F) is a pre-biased bipolar transistor featuring 1 NPN and 1 PNP configuration. It offers a 50V collector-emitter breakdown voltage and 100mA maximum collector current.
✓ Total Stock: 3,480 pcs

RN4601 Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
3,480 pcs
3480 pcs On Request 1 On Request On Request 2010 On Request On Request

RN4601 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Mounting Type
Package / Case
Power Dissipation
Supplier Package
Transistor Type

RN4601 Description

Short technical summary and product information.

The RN4601(TE85L,F) from Toshiba Semiconductor and Storage is a pre-biased bipolar junction transistor (BJT) array. This component integrates both an NPN and a PNP transistor, simplifying circuit design. It is designed for surface mount applications and comes in an SC-74, SOT-457 package.

 

Key electrical specifications include a collector-emitter breakdown voltage of 50V and a maximum collector current of 100mA. The device features integrated base resistors of 4.7kOhms and emitter base resistors of 4.7kOhms, along with a minimum DC current gain (hFE) of 30 at 10mA and 5V. Its transition frequency is rated at 250MHz, and it has a maximum power dissipation of 300mW.

 

The RN4601(TE85L,F) is suitable for various general-purpose amplification and switching applications where a pre-biased transistor configuration is beneficial. Its surface mount package facilitates automated assembly processes.

RN4601 Quick Information

Product Type: Pre-Biased Bipolar Transistor
Canonical Name: RN4601(TE85L,F) Pre-Biased Bipolar Transistor
Subcategory: Bipolar (BJT) - Single, Pre-Biased

RN4601 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

RN4601 Features

  • Dual pre-biased BJT (1 NPN, 1 PNP)
  • 50V collector-emitter breakdown voltage
  • 100mA maximum collector current
  • 250MHz transition frequency
  • Surface mount SC-74, SOT-457 package

RN4601 Applications

  • Used in switching circuits for embedded control.
  • Suitable for low-current driver stages.
  • Ideal for base-drive control of power transistors.
  • Common in signal conditioning pre-driver circuits.

RN4601 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the transistor configuration of the RN4601?

The RN4601 contains one NPN and one PNP pre-biased transistor in a single package.

What are the base and emitter resistor values?

Both the base resistor (R1) and emitter-base resistor (R2) are 4.7kΩ.

What is the maximum collector current rating?

The maximum collector current (Ic) is 100mA.

What is the collector-emitter breakdown voltage?

The maximum collector-emitter breakdown voltage is 50V.

What is the package type for the RN4601?

The RN4601 comes in a SC-74 (SOT-457) surface mount package with a supplier package designation of SM6.

What is the power dissipation rating?

The maximum power dissipation is 300mW.

What is the transition frequency?

The transition frequency (ft) is 250MHz.

Home

Categories