| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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3,480 pcs
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3480 pcs | On Request | 1 | On Request | On Request | 2010 | On Request | On Request |
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The RN4601(TE85L,F) from Toshiba Semiconductor and Storage is a pre-biased bipolar junction transistor (BJT) array. This component integrates both an NPN and a PNP transistor, simplifying circuit design. It is designed for surface mount applications and comes in an SC-74, SOT-457 package.
Key electrical specifications include a collector-emitter breakdown voltage of 50V and a maximum collector current of 100mA. The device features integrated base resistors of 4.7kOhms and emitter base resistors of 4.7kOhms, along with a minimum DC current gain (hFE) of 30 at 10mA and 5V. Its transition frequency is rated at 250MHz, and it has a maximum power dissipation of 300mW.
The RN4601(TE85L,F) is suitable for various general-purpose amplification and switching applications where a pre-biased transistor configuration is beneficial. Its surface mount package facilitates automated assembly processes.
The RN4601 contains one NPN and one PNP pre-biased transistor in a single package.
Both the base resistor (R1) and emitter-base resistor (R2) are 4.7kΩ.
The maximum collector current (Ic) is 100mA.
The maximum collector-emitter breakdown voltage is 50V.
The RN4601 comes in a SC-74 (SOT-457) surface mount package with a supplier package designation of SM6.
The maximum power dissipation is 300mW.
The transition frequency (ft) is 250MHz.