| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
3,000 pcs
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3000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The RN2906,LF from Toshiba is a pre-biased bipolar junction transistor (BJT) designed for discrete semiconductor applications. This component features a dual PNP configuration, providing two pre-biased PNP transistors within a single package.
Key electrical specifications include a collector-emitter breakdown voltage of 50V and a maximum collector current of 100mA. It boasts a DC current gain (hFE) of at least 80 at 10mA and 5V, with a Vce saturation of 300mV maximum at 250µA and 5mA. The transition frequency is rated at 200MHz, and it has a maximum power dissipation of 200mW.
This transistor is housed in a compact 6-TSSOP, SC-88, SOT-363 surface mount package, identified by the supplier device package code US6. The mounting type is surface mount, making it suitable for automated assembly processes.
Environmental compliance includes RoHS3 status. The component is supplied in Tape & Reel or Cut Tape packaging, with a standard package quantity of 3000 units.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The collector-emitter breakdown voltage is 50V.
The maximum collector current is 100mA.
The minimum DC current gain (hFE) is 80 at 10mA and 5V.
The transition frequency is 200MHz.
The maximum power dissipation is 200mW.
The RN2906,LF is in a 6-TSSOP, SC-88, SOT-363 package.
It is a surface mount device.