Mfr Part #:

RN2905,LF

Mfr Name: Toshiba

The Toshiba RN2905,LF is a pre-biased PNP transistor designed for general-purpose applications. It features a 50V collector-emitter breakdown voltage and 100mA maximum collector current.

✓ Total Stock: 1,215 pcs

$ Price Range: $2.23

RN2905,LF Available from 1 distributor

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✓ Non-Authorised

Distributor		Stock	Pricing	MOQ	PKG	Lead Time	Date Code	On Order Quantity	On Order Delivery
Rayichip ✓ Non-Authorised Inventory information	1,215 pcs On Request	1215 pcs	On Request	1	On Request	On Request	On Request	On Request	On Request

RN2905,LF Specifications Quick View

Most important parameters for selection – full specs in datasheet.

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Category	New Products
Manufacturer Name	Toshiba
Mounting Type	Surface Mount
Power Dissipation (Max)	200mW
Supplier Device Package	US6
Transistor Type	2 PNP - Pre-Biased (Dual)

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RN2905,LF Description

Short technical summary and product information.

The RN2905,LF from Toshiba is a dual PNP bipolar junction transistor with integrated base resistors, simplifying circuit design. It is specified for a maximum collector current of 100mA and a collector-emitter breakdown voltage of 50V.

This transistor features internal base resistors of 2.2k Ohms (R1) and 47k Ohms (R2), providing a minimum DC current gain (hFE) of 80 at 10mA and 5V. The Vce saturation is a maximum of 300mV at 250µA collector current and 5mA base current. Its transition frequency (fT) is 200MHz, and it has a maximum power dissipation of 200mW.

The RN2905,LF is housed in a compact 6-TSSOP, SC-88, or SOT-363 surface-mount package (US6), making it suitable for space-constrained applications. Its pre-biased configuration and integrated resistors simplify implementation in various electronic circuits.

RN2905,LF Quick Information

Product Type: PNP Transistor

Canonical Name: RN2905,LF Toshiba 2 PNP - Pre-Biased (Dual) Transistor

Subcategory: Bipolar (BJT) - Pre-Biased

RN2905,LF Compliance

RoHS Status: RoHS Compliant

Moisture Sensitivity Level (MSL): 1 Unlimited

REACH Status: REACH Unaffected

RN2905,LF Estimated Pricing

Qty	Low	High
1+	$2.23	$2.23

Estimated market price range - modelled values for guidance only, not live distributor offers.

RN2905,LF Features

Dual PNP pre-biased transistor.
50V collector-emitter breakdown voltage.
100mA maximum collector current.
Integrated base resistors (2.2kΩ / 47kΩ).
Surface mount SOT-363 (US6) package.

RN2905,LF Applications

Suitable for low-current transistor switching applications.
Used in current regulation circuits for electronic devices.
Ideal for RF and high-frequency switching circuits.
Applicable in compact surface-mount transistor modules.

RN2905,LF FAQs

5 frequently asked questions generated from this part’s specifications.

What is the maximum collector current for the RN2905,LF?

The maximum collector current for the RN2905,LF is 100mA.

What is the collector-emitter breakdown voltage of the RN2905,LF?

The collector-emitter breakdown voltage of the RN2905,LF is 50V.

What are the integrated base resistor values in the RN2905,LF?

The RN2905,LF has integrated base resistors with values of 2.2k Ohms for R1 and 47k Ohms for R2.

What is the minimum DC current gain (hFE) for the RN2905,LF?

The minimum DC current gain (hFE) for the RN2905,LF is 80 at 10mA collector current and 5V collector-emitter voltage.

What is the package type for the RN2905,LF transistor?

The RN2905,LF transistor is available in a 6-TSSOP, SC-88, SOT-363 (US6) surface mount package.