RN2603(TE85L,F) The Toshiba RN2603(TE85L,F) is a pre-biased PNP bipolar transistor array designed for switching and interface circuits. It offers a 50V collector-emitter voltage and 100mA collector current.
Mfr Part #:

RN2603(TE85L,F)

Available from 1 distributors
Mfr Name: Toshiba
Toshiba
The Toshiba RN2603(TE85L,F) is a pre-biased PNP bipolar transistor array designed for switching and interface circuits. It offers a 50V collector-emitter voltage and 100mA collector current.
✓ Total Stock: 110 pcs
$ Price Range: $0.99

RN2603(TE85L,F) Available from 1 distributor

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✓ Non-Authorised
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RN2603(TE85L,F) Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Frequency
Junction Temperature
Mounting Type
Power
Resistor
SVHC Present
Supplier Device Package
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage

RN2603(TE85L,F) Description

Short technical summary and product information.

The Toshiba RN2603(TE85L,F) is a pre-biased PNP bipolar transistor array, part of the RN2601~RN2606 series. It is designed for applications such as switching, inverter circuits, interface circuits, and driver circuits. This device integrates two transistors in an SM6 package, simplifying circuit design and reducing component count.

 

Key electrical specifications include a collector-emitter breakdown voltage of 50V and a continuous collector current of 100mA. It features a typical DC current gain (hFE) of 70 at 10mA and 5V, and a transition frequency (fT) of 200MHz. The built-in bias resistors simplify external circuitry. The RN2603(TE85L,F) has a maximum power dissipation of 300mW.

 

This transistor is housed in an SC-74, SOT-457 package, suitable for surface mounting. The SM6 supplier device package indicates its compact form factor. Its design with integrated resistors makes it a convenient choice for reducing manufacturing processes and part quantities in electronic designs.

RN2603(TE85L,F) Quick Information

Product Type: Pre-Biased Bipolar Transistor
Canonical Name: Toshiba RN2603(TE85L,F) Pre-Biased Bipolar Transistor
Subcategory: Pre-Biased Transistor Array

RN2603(TE85L,F) Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

RN2603(TE85L,F) Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

RN2603(TE85L,F) Features

  • Dual PNP pre-biased transistor array.
  • 50V collector-emitter breakdown voltage.
  • 100mA continuous collector current.
  • 200MHz typical transition frequency.
  • 300mW maximum power dissipation.

RN2603(TE85L,F) Applications

  • Used in switching circuits.
  • Suitable for inverter circuits.
  • Ideal for interface circuits.
  • Applicable for driver circuits.

RN2603(TE85L,F) FAQs

7 frequently asked questions generated from this part’s specifications.
What is the collector-emitter breakdown voltage for the RN2603(TE85L,F)?

The collector-emitter breakdown voltage is 50V.

What is the continuous collector current of the RN2603(TE85L,F)?

The continuous collector current is 100mA.

What is the transition frequency of the RN2603(TE85L,F)?

The transition frequency is 200MHz.

What is the power dissipation for the RN2603(TE85L,F)?

The maximum power dissipation is 300mW.

What type of package is the RN2603(TE85L,F) in?

The RN2603(TE85L,F) is in an SC-74, SOT-457 package.

What is the RoHS status of the RN2603(TE85L,F)?

The RoHS status is RoHS3 Compliant.

What is the Moisture Sensitivity Level (MSL) for the RN2603(TE85L,F)?

The Moisture Sensitivity Level is 1 Unlimited.

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