SL3S1206FUD2/HAA-VB2
NXP Semiconductors
The NXP Semiconductors SL3S1206FUD2/HAA-VB2 is a Chassis Mount Resistor. It is RoHS3 Compliant and REACH Unaffected.
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1,034 pcs
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1034 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Toshiba RN2111,LF is a single, pre-biased PNP bipolar transistor designed for various electronic applications. This component offers a collector-emitter voltage (VCEO) of up to 50V and can handle a collector current (Ic) of up to 100mA. Its power dissipation (Pd) is rated at 100mW.
The transistor exhibits a DC current gain (hFE) of 120 at 1mA and 5V. It is housed in an SC-75 (SOT-416) package, suitable for surface-mount applications. The RN2111,LF is specified as RoHS3 compliant, with an MSL rating of 1 Unlimited and REACH unaffected status.
This pre-biased transistor simplifies circuit design by integrating a bias resistor, making it useful in applications where a stable bias point is required. Its compact SC-75 package allows for efficient use of board space in miniaturized electronic devices.
| Qty | Low | High |
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| 1+ | $1.44 | $1.44 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The collector-emitter voltage (VCEO) for the RN2111,LF is 50V.
The RN2111,LF transistor has a maximum collector current (Ic) of 100mA.
The power dissipation (Pd) for the RN2111,LF is 100mW.
The DC current gain (hFE) of the RN2111,LF is 120 at 1mA and 5V.
The RN2111,LF transistor is supplied in an SC-75(SOT-416) package.
