| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
420,465 pcs
|
420465 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name |
The RN1963FETE85L,F is a bipolar junction transistor (BJT) manufactured by Toshiba. It falls under the category of single, pre-biased transistors, indicating it comes with integrated biasing resistors for simplified circuit design.
This component is compliant with RoHS3 standards and has a Moisture Sensitivity Level (MSL) of 1, meaning it has unlimited shelf life under recommended storage conditions. The REACH status is unaffected.
As a pre-biased transistor, the RN1963FETE85L,F is designed for ease of use in various electronic circuits. Its specific electrical characteristics, such as collector-emitter voltage, collector current, and DC current gain, would typically be detailed in the manufacturer's datasheet. The component is suitable for applications requiring a reliable and straightforward transistor solution.
Further details regarding package type, mounting, and specific operating conditions are available in the product's technical documentation.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The RN1963FETE85L,F transistor is RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) for the RN1963FETE85L,F is 1 Unlimited.
The REACH status for the RN1963FETE85L,F is REACH Unaffected.