Mfr Part #:

RN1911FE,LF(CT

Name: RN1911FE,LF(CT
Brand: Toshiba Semiconductor and Storage
SKU: RN1911FE,LF(CT

Description:

NPN X 2 BRT Q1BSR=10KOHM Q1BER=I

Stock on Request

RN1911FE,LF(CT Description

Short technical summary and product information.

NPN X 2 BRT Q1BSR=10KOHM Q1BER=I

Mfr Standard Lead Time: 12 weeks (varies by distributor)

RoHS Status: RoHS Compliant

Moisture Sensitivity Level (MSL): 1 Unlimited

REACH Status: REACH Unaffected

Same form/fit/function or matching attribute configuration across different manufacturers.

Toshiba Semiconductor and Storage

AUTO AEC-Q NPN X 2 Q1BSR=10K, Q2

RN1911FETE85LF

Toshiba Semiconductor and Storage

TRANS 2NPN PREBIAS 0.1W ES6

Toshiba Semiconductor and Storage

TRANS 2NPN PREBIAS 0.1W ES6

Category	Transistors - Bipolar (BJT) - Arrays, Pre-Biased
Manufacturer Name	Toshiba Semiconductor and Storage
Current	100mA
DC Current Gain (hFE) (Min) @ Ic, Vce	120 @ 1mA, 5V
Frequency	250MHz
Mounting Type	Surface Mount
Power	100mW
Resistor	10kΩ
Supplier Device Package	ES6
Transistor Type	2 NPN - Pre-Biased (Dual)
Vce Saturation (Max) @ Ib, Ic	300mV @ 250µA, 5mA
Voltage	50V