| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,130,000 pcs
|
1130000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Junction Temperature | |
| Mounting Type | |
| Weight |
The Toshiba RN1902,LFCT is an NPN Epitaxial Transistor utilizing a PCT Process and incorporating built-in bias resistors. This design simplifies circuit construction, reduces component count, and enables equipment miniaturization. It is suitable for switching, inverter, interface, and driver circuits.
Key electrical characteristics include a Collector-Emitter Voltage (VCEO) of 50V and a Collector Current (IC) of 100mA. The device features integrated bias resistors with nominal values of 10kΩ for both R1 and R2. The Collector-Emitter Saturation Voltage (VCE(sat)) is typically 0.1V at 5mA collector current and 0.25mA base current.
This transistor is housed in a compact US6 package, designed for surface mounting. It operates within a junction temperature range of 150°C and a storage temperature range of -55°C to 150°C. The RN1902,LFCT is AEC-Q101 qualified, indicating its suitability for automotive applications.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
50 V.
US6 (surface mount).
100 mA.
R1 and R2 are both 10 kΩ.
Minimum 50 at VCE=5V, IC=10mA.
150 °C.
-55 to 150 °C.