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RN1441ATE85LF The RN1441ATE85LF is a pre-biased NPN bipolar junction transistor designed for switching and amplification applications. It features a maximum collector-emitter voltage of 20V and a collector current of 300mA, housed in a S-Mini package for surface mounting.
Mfr Part #:

RN1441ATE85LF

Available from 1 distributors
Mfr Name: Toshiba
Toshiba
The RN1441ATE85LF is a pre-biased NPN bipolar junction transistor designed for switching and amplification applications. It features a maximum collector-emitter voltage of 20V and a collector current of 300mA, housed in a S-Mini package for surface mounting.
✓ Total Stock: 1,307 pcs
$ Price Range: $1.17

RN1441ATE85LF Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Smaxon Electronics ✓
Non-Authorised Inventory information
1,307 pcs
On Request
1307 pcs On Request 1 On Request On Request 16+ On Request On Request
DistyParts aggregates offers from multiple distributors. Final prices, lead times and terms are subject to the distributors' discretion and may change without prior notice. DistyParts is not liable for any discrepancies.

RN1441ATE85LF Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Frequency
Mounting Type
Power
Resistor
Supplier Device Package
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage
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RN1441ATE85LF Description

Short technical summary and product information.

The Toshiba RN1441ATE85LF is a bipolar junction transistor (BJT) intended for use in switching and amplification circuits. It is a pre-biased NPN type with a collector-emitter voltage rating of 20V and a maximum collector current of 300mA. The device offers a DC current gain (hFE) of at least 200 at 4mA collector current and 2V collector-emitter voltage, making it suitable for low-power applications. Its transition frequency is 30 MHz, supporting high-speed switching. The package type includes TO-236-3, SC-59, and SOT-23-3, all designed for surface mounting. The component complies with RoHS3 standards and has an MSL level of 1, indicating unlimited moisture resistance. It is manufactured by Toshiba and is part of the discrete semiconductor product category, specifically within the bipolar transistor subcategory. The device's compact S-Mini package makes it ideal for space-constrained designs in consumer electronics, automotive, and industrial equipment.

RN1441ATE85LF Quick Information

Product Type: Transistor
Canonical Name: Toshiba RN1441ATE85LF NPN Pre-Biased Transistor
Subcategory: Pre-Biased NPN

RN1441ATE85LF Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

RN1441ATE85LF Estimated Pricing

Qty Low High
1+ $1.17 $1.17

Estimated market price range - modelled values for guidance only, not live distributor offers.

RN1441ATE85LF Features

  • Maximum collector-emitter voltage of 20V
  • Collector current rated at 300mA
  • DC gain (hFE) of 200 minimum
  • Surface mount S-Mini package
  • RoHS3 compliant

RN1441ATE85LF Applications

  • Ideal for low-power switching circuits
  • Suitable for amplification applications
  • Used in consumer electronics devices
  • Applicable in automotive control modules

RN1441ATE85LF FAQs

5 frequently asked questions generated from this part’s specifications.
What is the maximum collector-emitter voltage of the RN1441ATE85LF?

The maximum collector-emitter voltage is 20 V.

What is the collector current rating for the RN1441ATE85LF?

The collector current is rated at 300 mA.

Is the RN1441ATE85LF RoHS compliant?

Yes, it is RoHS3 compliant.

What package types are available for the RN1441ATE85LF?

It is available in TO-236-3, SC-59, and SOT-23-3 packages.

What is the transition frequency of this transistor?

The transition frequency is 30 MHz.

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