RN1421TE85LF The Toshiba RN1421TE85LF is an NPN pre-biased bipolar transistor designed for surface mount applications. It offers a 50V collector-emitter voltage and 800mA continuous collector current.
Mfr Part #:

RN1421TE85LF

Available from 2 distributors
Mfr Name: Toshiba
Toshiba
The Toshiba RN1421TE85LF is an NPN pre-biased bipolar transistor designed for surface mount applications. It offers a 50V collector-emitter voltage and 800mA continuous collector current.
✓ Total Stock: 1,205,030 pcs
$ Price Range: $1.17

RN1421TE85LF Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
1,205,000 pcs
1205000 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
30 pcs
30 pcs On Request 1 On Request On Request On Request On Request On Request

RN1421TE85LF Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Frequency
Mounting Type
Power
Resistor
Supplier Device Package
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage

RN1421TE85LF Description

Short technical summary and product information.

The Toshiba RN1421TE85LF is a pre-biased NPN bipolar transistor suitable for various electronic applications. It features a maximum collector-emitter voltage of 50V and a continuous collector current rating of 800mA. The transistor includes an integrated input resistor of 1 kΩ, simplifying circuit design.

 

This component is housed in a compact S-Mini package, also known as TO-236-3, SC-59, or SOT-23-3, making it ideal for space-constrained designs. It is designed for surface mounting, facilitating automated assembly processes.

 

The RN1421TE85LF operates with a maximum power dissipation of 200 mW and has a frequency response up to 300 MHz. Its DC current gain (hFE) is a minimum of 60 at 100mA and 1V. The saturation voltage (Vce Sat) is a maximum of 250mV at 2mA and 50mA.

 

This transistor is specified for a maximum operating temperature of +150 C. It is supplied in reel packaging with a factory pack quantity of 3000 units.

RN1421TE85LF Quick Information

Product Type: Pre-Biased Transistor
Series: Rn1421
Canonical Name: Toshiba RN1421TE85LF NPN Pre-Biased Transistor
Subcategory: Pre-Biased Transistor

RN1421TE85LF Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

RN1421TE85LF Estimated Pricing

Qty Low High
1+ $1.17 $1.17

Estimated market price range - modelled values for guidance only, not live distributor offers.

RN1421TE85LF Features

  • NPN pre-biased bipolar transistor.
  • 50V collector-emitter voltage rating.
  • 800mA continuous collector current.
  • Integrated 1 kΩ input resistor.
  • Surface mount S-Mini package.

RN1421TE85LF Applications

  • Suitable for general switching applications.
  • Ideal for compact electronic circuits.
  • Used in signal amplification stages.
  • Component for portable devices.

RN1421TE85LF FAQs

5 frequently asked questions generated from this part’s specifications.
What is the maximum collector-emitter voltage for the RN1421TE85LF?

The maximum collector-emitter voltage (VCEO Max) for the RN1421TE85LF is 50V.

What is the continuous collector current rating?

The continuous collector current for the RN1421TE85LF is 800 mA.

What is the input resistance of this pre-biased transistor?

The typical input resistance for the RN1421TE85LF is 1 kΩ.

What is the package type for the RN1421TE85LF?

The RN1421TE85LF is available in a Surface Mount package, specifically TO-236-3, SC-59, or SOT-23-3, also referred to as S-Mini.

What is the maximum operating temperature?

The maximum operating temperature for the RN1421TE85LF is +150 C.

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