| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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3,000 pcs
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3000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Toshiba RN1416LF is a silicon NPN epitaxial transistor featuring built-in bias resistors, simplifying circuit design and reducing component count. It is suitable for switching, inverter, interface, and driver circuit applications.
This transistor operates with a collector-emitter voltage (VCEO) of up to 50V and a continuous collector current (IC) of 100mA. The collector power dissipation (PC) is rated at 200mW. The device has a transition frequency (fT) of 250MHz.
Packaged in an S-Mini (TO-236-3, SC-59, SOT-23-3) surface-mount package, the RN1416LF is designed for ease of integration into compact electronic assemblies. Its pre-biased configuration simplifies external circuitry requirements for common applications.
Complementary to the RN2414 to RN2418 series, the RN1416LF offers a simplified manufacturing process and reduced part count for various electronic designs.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.17 | $1.17 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The collector-emitter voltage (VCEO) for the RN1416LF transistor is 50V.
The maximum continuous collector current (IC) for the RN1416LF is 100mA.
The RN1416LF transistor is available in a TO-236-3, SC-59, SOT-23-3 package.
The transition frequency (fT) of the RN1416LF transistor is 250MHz.
The RN1416LF has a typical input resistor (R1) of 4.7 kΩ and a typical resistor (R2) of 10 kΩ.