| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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301,000 pcs
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301000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
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| Mounting Style | |
| Power Dissipation | |
| Tape & Reel |
The Toshiba RN1307TE85L.F is a single, pre-biased NPN bipolar junction transistor (BJT) designed for electronic circuits requiring a specific bias condition.
This component offers a maximum collector-emitter voltage (VCEO) of 50V and can handle a continuous collector current (Ic) of up to 100mA. It features a minimum DC current gain (hfe) of 80. The transistor includes internal bias resistors, with a typical configuration involving a 47kohm resistor.
Packaged in an SMD/SMT SC-70 case, the RN1307TE85L.F is suitable for surface-mount assembly. It operates within a maximum temperature range of +150°C and is supplied on a reel, with a standard pack quantity of 3000 units.
This pre-biased transistor simplifies circuit design by integrating the necessary biasing components, making it useful in applications where consistent and reliable transistor biasing is required.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (VCEO) for the RN1307TE85L.F is 50V.
The continuous collector current (Ic) for the RN1307TE85L.F is 100mA.
The minimum DC current gain (hfe) for this transistor is 80.
The RN1307TE85L.F is supplied in an SC-70 package.
The maximum operating temperature for this component is 150°C.
The RN1307TE85L.F is packaged on a reel.