| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
301,000 pcs
|
301000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Manufacturer Name | |
| Mounting Style | |
| Operating Temperature | |
| Power Dissipation | |
| Tape & Reel |
The Toshiba RN1307TE85L,F is a pre-biased NPN bipolar transistor designed for electronic circuits requiring a stable and reliable switching or amplification component. It offers a maximum collector-emitter voltage (VCEO) of 50V and a continuous collector current of 100mA, making it suitable for a range of low-power applications.
This transistor features an integrated bias resistor with a typical ratio of 0.213 and a value of 10kohm, simplifying circuit design. The minimum DC current gain (hfe) is rated at 80. The device operates within a maximum temperature of 150°C and has a power dissipation of 100mW.
Packaged in an SC-70 surface-mount (SMD/SMT) case, the RN1307TE85L,F is supplied on a reel, with a standard pack quantity of 3000 units. Its compact size and surface-mount capability make it ideal for high-density printed circuit board assemblies.
Environmental compliance includes RoHS3 compliance, an MSL rating of 1, and REACH unaffected status. These attributes ensure suitability for various manufacturing processes and global market requirements.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.81 | $2.81 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (VCEO) is 50V.
The continuous collector current is 100mA.
The minimum DC current gain (hfe) is 80.
The maximum operating temperature is 150°C.
It is supplied in an SC-70 package, suitable for SMD/SMT mounting.
The RoHS status is RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) is 1 Unlimited.