| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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6,000 pcs
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6000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Toshiba RN1306LF is a single, pre-biased NPN bipolar junction transistor (BJT) suitable for various electronic applications. It is designed for surface mount installation, utilizing the SC-70 or SOT-323 package.
Key electrical characteristics include a maximum voltage rating of 50V and a continuous current capability of 100mA, with a power dissipation of 100mW. The transistor offers a DC current gain (hFE) of at least 80 at 10mA and 5V, and a Vce saturation of 300mV maximum at 250µA and 5mA. Its operating frequency reaches up to 250MHz.
This component includes an internal resistor of 47 kΩ, simplifying circuit design. The RN1306LF is specified with RoHS3 compliance and an MSL 1 rating, indicating unlimited moisture sensitivity. Its compact size and pre-biased configuration make it a convenient choice for signal amplification and switching circuits where space is a constraint.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.17 | $1.17 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The RN1306LF transistor has a maximum operating voltage of 50V.
The RN1306LF transistor can handle a continuous current of 100mA.
The RN1306LF transistor is supplied in the SC-70, SOT-323 package.
The RN1306LF transistor is designed for surface mount installation.
The RN1306LF transistor has a minimum DC current gain of 80 at 10mA and 5V.
The saturation voltage for the RN1306LF transistor is a maximum of 300mV at 250µA and 5mA.