| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
80,000 pcs
|
80000 pcs | On Request | 1 | On Request | On Request | 14+ | On Request | On Request | |
|
7,841 pcs
|
7841 pcs | On Request | 1 | On Request | On Request | 0807+ | On Request | On Request |
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The Toshiba RN1130MFV TPL3 is a pre-biased bipolar transistor designed for various electronic applications. It offers a maximum collector-emitter voltage (VCEO) of 50V and can handle a continuous collector current of 100mA. The transistor features a minimum DC collector/base gain (hfe) of 100 and an emitter-base voltage (VEBO) of 10V.
This component operates within a wide temperature range, from -65°C to +150°C, making it suitable for demanding environments. The power dissipation is rated at 150mW. The RN1130MFV TPL3 is mounted using an SMD/SMT (Surface Mount Device/Surface Mount Technology) process and comes in a VESM-3 package, typically supplied on a reel in factory quantities of 8000 units.
Additional specifications include a typical resistor ratio of 1. This transistor is categorized under Bipolar Transistors - Pre-Biased.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.29 | $0.29 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (VCEO) for the RN1130MFV TPL3 is 50V.
The continuous collector current rating is 100mA.
The operating temperature range is from -65°C to +150°C.
The RN1130MFV TPL3 is in a VESM-3 package and uses SMD/SMT mounting.
A factory pack contains 8000 units.