| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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2,000,009 pcs
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2000009 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Manufacturer Name |
The RN1107FTTE85L,F from Toshiba is a single, pre-biased bipolar junction transistor (BJT) designed for discrete semiconductor applications. This component is RoHS3 Compliant and REACH Unaffected, indicating adherence to environmental regulations. It also features a Moisture Sensitivity Level (MSL) of 1 Unlimited, suggesting it is not sensitive to ambient moisture and can be handled without special precautions.
As a pre-biased transistor, it simplifies circuit design by including integrated resistors, making it suitable for applications where a specific bias condition is required. Its classification falls under the category of discrete semiconductor products, specifically within the single, pre-biased BJT subcategory.
This transistor is part of Toshiba's range of semiconductor solutions, offering reliable performance for various electronic designs. The part number RN1107FTTE85L,F specifies a particular configuration and packaging, though specific details on package type and quantity are not provided in the available data.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The RN1107FTTE85L,F transistor is RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) for the RN1107FTTE85L,F is 1 Unlimited.
The RN1107FTTE85L,F is REACH Unaffected.