| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
37 pcs
|
37 pcs | On Request | 1 | On Request | On Request | 00+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Bandwidth | |
| Gain | |
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The Raytheon RMM2080 is a GaAs MMIC device designed as a three-stage distributed medium-power amplifier with integrated gain control. It operates across a wide bandwidth of 2-18 GHz, offering a typical gain of 24 dB and a gain flatness of ±2 dB. The amplifier provides a typical output power of 20 dBm and features a significant gain control range of up to 70 dB.
The circuit utilizes ion-implanted, 0.5-µm gate MESFET devices fabricated on a semi-insulating GaAs substrate. The initial two stages are 4-cell distributed amplifiers employing dual-gate FETs for enhanced gain per stage and to facilitate gain control. The third stage is a 3-cell distributed dual-gate FET amplifier optimized for high output power and efficiency.
Designed for interconnection with microstrip transmission media, the RMM2080 is suitable for automatic assembly techniques. Its chip size is 4.14mm x 3.22mm x 0.1mm.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.32 | $1.32 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
2-18 GHz.
24 dB.
±2 dB.
20 dBm typical.
70 dB.
4.14mm x 3.22mm x 0.1mm.
Dual-gate ion-implanted 0.5 µm FETs.