| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
6,746 pcs
|
6746 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name |
The Renesas RMLV0816BGSB-4S2 is an 8-Mbit static RAM organized as 524,288 words by 16 bits, fabricated using Renesas's high-performance Advanced LPSRAM technologies. This memory device offers high density, high performance, and low power consumption, making it ideal for battery backup systems due to its low standby power dissipation.
Key electrical specifications include a single 3V supply voltage range of 2.4V to 3.6V. Access times are rated at 45ns maximum for supply voltages from 2.7V to 3.6V, and 55ns maximum for voltages from 2.4V to 2.7V. The device features a typical standby current consumption of 0.45µA.
It operates across a temperature range of -40°C to +85°C. The RMLV0816BGSB-4S2 comes in a 44-pin TSOP(II) package with surface mount mounting type. All inputs and outputs are directly TTL compatible, and it features common data input and output with a three-state output. The memory array is organized as 512k-word x 16-bit.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.28 | $1.28 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
2.4V to 3.6V.
44-TSSOP (0.173", 4.40mm wide).
-40°C to +85°C.
8Mb organized as 524,288-word x 16-bit.
45ns maximum at 2.7V-3.6V supply, 55ns maximum at 2.4V-2.7V.
0.45µA typical.