| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
4,018 pcs
|
4018 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Access Time | |
| Memory Format | |
| Memory Interface | |
| Memory Organization | |
| Memory Size | |
| Memory Type | |
| Mounting Type | |
| Operating Temperature | |
| SVHC Present | |
| Supplier Device Package | |
| Technology | |
| Voltage | |
| Write Cycle Time |
The Renesas RMLV0808BGSB-4S2#AA0 is a high-performance SRAM memory integrated circuit with a capacity of 8Mbit. It utilizes a parallel interface for data access, offering a fast access time of 45 nanoseconds. This volatile memory component is organized as 1M x 8 and operates reliably within a voltage range of 2.4V to 3.6V.
Designed for surface mounting, the IC comes in a 44-TSOP II package, specified as 44-TSOP with a width of 0.400 inches (10.16mm). The operating temperature range is specified from -40°C to 85°C (TA), making it suitable for various environmental conditions. The technology employed is SRAM, providing fast read and write capabilities with a write cycle time also at 45ns.
This component is suitable for applications requiring fast data storage and retrieval. Its specifications make it a viable option for embedded systems, data logging, and buffer memory needs where speed and density are critical.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.28 | $1.28 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
8 Mbit (1M x 8).
45 ns.
2.4V to 3.6V.
-40°C to +85°C.
44-TSOP II (0.400", 10.16mm width).
Volatile.